www.DataSheet4U.com
N-CHANNEL 200V - 0.15Ω - 19A - TO-220/TO-220FP/I2PAK PowerMESH™ MOSFET
TYPE STP19NB20 STP19NB20FP S...
www.DataSheet4U.com
N-CHANNEL 200V - 0.15Ω - 19A - TO-220/TO-220FP/I2PAK PowerMESH™
MOSFET
TYPE STP19NB20 STP19NB20FP STB19NB20-1
s s s s s
STP19NB20 - STP19NB20FP STB19NB20-1
VDSS 200 V 200 V 200 V
RDS(on) < 0.18 Ω < 0.18 Ω < 0.18 Ω
ID 19 A 10 A 19 A
3 1 2
TYPICAL RDS(on) = 0.15 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH
VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
TO-220
TO-220FP
DESCRIPTION Using the latest high
voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power
MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) VISO Tstg Tj August 2002 Parameter Drain-source
Voltage (VGS = 0) Drain-gate
Voltage (RGS = 20 kΩ) Gate- source
Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery
voltage slope Insulation Withstand
Voltage (DC) Storage Temperature Max. Operating Junction Temperature
I PAK (Tabless TO-220) INTERNAL SCHEMATIC DIAGRAM
2
12
3
...