STN690A

STN690A High performance low voltage NPN transistor Features ■ Very low collector to emitter saturation voltage ■ DC current gain, hFE > 100 ■ 3 A continuous collector current t(s)■ 40 V breakdown voltage V(BR)CER ■ SOT-223 plastic package for surface mounting uccircuits in tape and reel packaging rodApplications te P■ Power management in portable equipment le■ Voltage regulation in bias supply circuits o■ Switching regulator in battery charger sapplications Ob■ Heavy load driver t(s) -Description cThe device in manufactured in low voltage NPN uplanar technology by using a “Base Island” layout. dThe resulting transistor shows exceptional high rogain performance coupled with very low Obsolete Psaturation voltage. 4 3 2 1 SOT-223 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking STN690A N690A Package SOT-223 Packaging Tape and reel February 2009 Rev 2 1/9 www.st.com 9 Electrical ratings 1 Electrical ratings STN690A Table 2. Symbol Absolute maximum ratings Parameter Value Unit VCBO Collector-base voltage (IE = 0) 40 V VCER Collector-emitter voltage (RBE = 47 Ω) 40 V VCEO Collector-emitter voltage (IB = 0) 30 V VEBO )IC t(sICM ucPtot rodTstg PTJ Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Total dissipation at Tamb = 25 °C Storage temperature Max. operating junction temperature leteTable 3. Thermal data soSymbol Parameter ObRthj-amb Thermal resistance junction-amb (1)_ Obsolete Pr...