STN1A60

Features ■ Repetitive Peak off-State Voltage: 600V ■ R.M.S On-State Current(IT(RMS)=1A ■ Low on-state voltage: VTM=1.2(typ.)@ ITM ■ Low reverse and forward blocking current: IDRM=500uA@TC=125℃ ■ Low holding current: IH=4mA (typ.) ■ High Commutation dV/dt. STN1A60 Logic Level Bi-Directional Triode Thyristor General Description General purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control, lighting control and static switching relay. Absolute Maximum Ratings (TJ=25℃ unless otherwise specified) Symbol Parameter Value Units VDRM T(RMS) ITSM I2t Peak Repetitive Forward Blocking Voltage(gate open) (Note 1) Forward Current RMS (All Conduction Angles, TL=50℃) Peak Forward Surge Current, (full Cycle, Sine Wave, 50/60 Hz) Circuit Fusing Considerations (tp= 10 ms) 600 1 9.1/10 0.41 V A A A2s PGM PG(AV) dI/dt IFGM Peak Gate Power — Forward, (Tc = 58°C,Pulse with≤1.0us) Average Gate Power — Forward, (Over any 20ms period) Critical rate of rise of on-state current ITM = 1.5A; IG = 200mA; dIG/dt = 200mA/µs TJ=125℃ Peak Gate Current — Forward, Tj = 125°C (20 µs, 120 PPS) 5W 0.1 W 50 A/μs 0.5 A VRGM Peak Gate Voltage — Reverse, Tj = 125°C (20 µs, 120 PPS) 6V TJ, Junction Temperature -40~125 ℃ Tstg Storage Temperature -40~150 ℃ mass 2g Note1: .Although not recommended, off-s...