STL65N3LLH5
N-channel 30 V, 0.0048 Ω , 19 A - PowerFLAT™ (6x5) STripFET™ V Power MOSFET
Features
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Ty...
STL65N3LLH5
N-channel 30 V, 0.0048 Ω , 19 A - PowerFLAT™ (6x5) STripFET™ V Power
MOSFET
Features
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Type
VDSS 30 V
RDS(on) max <0.0058 Ω
ID 19 A (1)
STL65N3LLH5
1. The value is rated according Rthj-pcb ■ ■ ■ ■ ■
RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses
PowerFLAT™ ( 6x5 )
Application
■
Switching applications
Figure 1.
Internal schematic diagram
Description
This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.
Table 1.
Device summary
Marking 65N3LLH5 Package PowerFLAT™ (6x5) Packaging Tape and reel
Order code STL65N3LLH5
September 2008
Rev 4
1/12
www.st.com 12
Contents
STL65N3LLH5
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
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3 4 5
Test circuits
.............................................. 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . ....