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STH8NA80 Datasheet

Part Number STH8NA80
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
Datasheet STH8NA80 DatasheetSTH8NA80 Datasheet (PDF)

® STW8NA80 STH8NA80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE STW 8NA80 STH8NA80F I s s s s s s s V DSS 800 V 800 V R DS(on) < 1.50 Ω < 1.50 Ω ID 7.2 A 4.5 A TYPICAL RDS(on) = 1.3 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD 1 2 3 2 1 3 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage tech.

  STH8NA80   STH8NA80






Part Number STH8NA80FI
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
Datasheet STH8NA80 DatasheetSTH8NA80FI Datasheet (PDF)

® STW8NA80 STH8NA80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE STW 8NA80 STH8NA80F I s s s s s s s V DSS 800 V 800 V R DS(on) < 1.50 Ω < 1.50 Ω ID 7.2 A 4.5 A TYPICAL RDS(on) = 1.3 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD 1 2 3 2 1 3 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage tech.

  STH8NA80   STH8NA80







N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

® STW8NA80 STH8NA80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE STW 8NA80 STH8NA80F I s s s s s s s V DSS 800 V 800 V R DS(on) < 1.50 Ω < 1.50 Ω ID 7.2 A 4.5 A TYPICAL RDS(on) = 1.3 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD 1 2 3 2 1 3 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symb ol Parameter TO-247 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM Valu e STW 8NA80 ST H8NA80FI 800 800 ± 30 o Unit V DS V DGR V GS ID ID I DM ( • ) P tot V ISO T s tg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 oC Derating Factor Insulation W ithstand Voltage (DC) Storage T emperature Max. O perating Junct ion T emperature o V V V 4.5 2.8 28.8 70 0.56 4000 A A A W W/ oC V o o 7.2 4.5 28.8 175 1.4  -65 to 150 1.


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