DatasheetsPDF.com

STGW60H65DF

STMicroelectronics
Part Number STGW60H65DF
Manufacturer STMicroelectronics
Description field stop trench gate IGBT
Published Sep 6, 2017
Detailed Description STGW60H65DF 60 A, 650 V field stop trench gate IGBT with very fast diode Features ■ High speed switching ■ Tight param...
Datasheet PDF File STGW60H65DF PDF File

STGW60H65DF
STGW60H65DF

Overview
STGW60H65DF 60 A, 650 V field stop trench gate IGBT with very fast diode Features ■ High speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ Very fast soft recovery antiparallel diode ■ Lead free package Applications ■ Photovoltaic inverters ■ Uninterruptible power supply ■ Welding ■ Power factor correction ■ High switching frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.
This IGBT is the result of a compromise between conduction and switching losses, maximizing the efficiency of high switching frequency converters.
Furthermore, ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)