STGW20V60DF

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data TAB TAB Features Maximum junction temperature: TJ = 175 °C Very high speed switching series 3 2 1 1 3 Tail-less switching off Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A Tight parameters distribution Safe paralleling Low thermal resistance 3 TO-220 TAB D²PAK 3 2 1 1 2 Very fast soft recovery antiparallel diode Lead free package TO-247 TO-3P Figure 1. Internal schematic diagram Applications Photovoltaic inverters Uninterruptible power supply Welding Power factor correction Very high frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code STGB20V60DF STGP20V60DF STGW20V60DF STGWT20V60DF June 2013 This is information on a product in full production. Marking GB20V60DF GP20V60DF GW20V60DF GWT20V60DF Package D²PAK TO-220 TO-247 TO-3P Packaging Tape and reel Tube Tube Tube 1/23 www.st.com 23 DocID024360 Rev 3 http://www.Datasheet4U.com Contents STGB20V60DF, ST...