STFW4N150

STFW4N150, STP4N150, STW4N150 Datasheet N-channel 1500 V, 6 Ω typ., 4 A, PowerMESH Power MOSFET in TO-220, TO-247 and TO-3PF packages 1 TO-3PF 3 2 1 TAB TO-220 1 2 3 3 2 1 TO-247 D(2, TAB) G(1) Features 100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Applications Switching applications Description These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers. S(3) AM01475v1_noZen Product status links STFW4N150 STP4N150 STW4N150 DS4257 - Rev 10 - November 2023 For further information contact your local STMicroelectronics sales office. www.st.com STFW4N150, STP4N150, STW4N150 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature range TJ Operating junction temperature range 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. Value Unit TO-3PF TO-220 TO-247 1500 V ±30 V 4(1) 4 4 A ...