STF8236

STF8236Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS 20V ID RDS(ON) (mΩ) Max 22.0 @ VGS=4.5V 22.5 @ VGS=4.0V 6A 23.0 @ VGS=3.7V 25.0 @ VGS=3.1V 29.0 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. PIN 1 S1 S1 G1 D1/D2 S2 S2 G2 DFN 2X2 Bottom Drain Contact (D1/D2) G1 3 4 G2 S1 2 5 S2 S1 1 6 S2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol VDS VGS ID IDM Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous c -Pulsed a c TA=25°C TA=70°C PD Maximum Power Dissipation TA=25°C TA=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient Limit 20 ±12 6 4.8 36 1.4 0.9 -55 to 150 90 Units V V A A A W W °C °C/W Details are subject to change without notice. 1 Oct,24,2014 www.samhop.com.tw STF8236 Ver 1.0 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Symbol Parameter Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=16V , VGS=0V VGS= ±8V , VDS=0V 20 ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance SWITCHING CHARACTERISTICS b tD(ON) Turn-On Delay Time tr tD(OFF) Rise Time T...