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STF25NM60ND

STMicroelectronics

N-channel MOSFET

STB25NM60ND-STI25NM60ND STF/P25NM60ND-STW25NM60ND N-channel 600 V - 0.13 Ω - 21 A FDmesh™ II Power MOSFET D2PAK - I2PAK ...


STMicroelectronics

STF25NM60ND

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Description
STB25NM60ND-STI25NM60ND STF/P25NM60ND-STW25NM60ND N-channel 600 V - 0.13 Ω - 21 A FDmesh™ II Power MOSFET D2PAK - I2PAK - TO-220FP - TO-220 - TO-247 Features Type www.DataSheet4U.com VDSS @ TJMAX RDS(on) max ID 3 3 1 2 3 1 2 1 STB25NM60ND STI25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND 650 V 0.16 Ω 21 A 21 A 21 A(1) 21 A 21 A TO-220 D2PAK TO-220FP 1. Limited only by maximum temperature allowed ■ ■ ■ ■ ■ 3 12 2 1 3 The worldwide best RDS(on)*area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities Figure 1. I2PAK TO-247 Internal schematic diagram Application ■ Switching applications Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly recommended for bridge topologies, in ZVS phase-shift converters. Table 1. Device summary Marking 25NM60ND 25NM60ND 25NM60ND 25NM60ND 25NM60ND Rev 3 Package D²PAK I²PAK TO-220FP TO-220 TO-247 Packaging Tape and reel Tube Tube Tube Tube 1/18 www.st.com 18 Order codes STB25NM60ND STI25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND April 2008 Contents STP/F25NM60ND - STB25NM60ND - STI25NM60ND - STW25NM60ND Contents 1 2 Electrical rating...




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