STE40NK90ZD
N-CHANNEL 900V - 0.14Ω - 40 A ISOTOP Super FREDMesh™ MOSFET
Table 1: General Features
TYPE STE40NK90ZD
s s s...
STE40NK90ZD
N-CHANNEL 900V - 0.14Ω - 40 A ISOTOP Super FREDMesh™
MOSFET
Table 1: General Features
TYPE STE40NK90ZD
s s s s s s
Figure 1: Package
ID 40 A Pw 600 W
VDSS 900 V
RDS(on) < 0.18 Ω
TYPICAL RDS(on) = 0.14 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY
ISOTOP
DESCRIPTION The SuperFREDMesh™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high
voltage MOSFETs including revolutionary MDmesh™ products. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR WELDING EQUIPMENT
Figure 2: Internal Schematic Diagram
Table 2: Order Codes
SALES TYPE STE40NK90ZD MARKING E40NK90ZD PACKAGE ISOTOP PACKAGING TUBE
Rev. 4 December 2004 1/10
www.DataSheet4U.com
STE40NK90ZD
Table 3: Absolute Maximum ratings
Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Parameter Drain-source
Voltage (VGS = 0) Drain-gate
Voltage (RGS = 20 kΩ) Gate- source
Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery
voltage slope Insulation Withstand
Voltage (AC-...