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STE40NK90ZD

ST Microelectronics

N-CHANNEL Power MOSFET

STE40NK90ZD N-CHANNEL 900V - 0.14Ω - 40 A ISOTOP Super FREDMesh™ MOSFET Table 1: General Features TYPE STE40NK90ZD s s s...


ST Microelectronics

STE40NK90ZD

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STE40NK90ZD N-CHANNEL 900V - 0.14Ω - 40 A ISOTOP Super FREDMesh™ MOSFET Table 1: General Features TYPE STE40NK90ZD s s s s s s Figure 1: Package ID 40 A Pw 600 W VDSS 900 V RDS(on) < 0.18 Ω TYPICAL RDS(on) = 0.14 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY ISOTOP DESCRIPTION The SuperFREDMesh™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR WELDING EQUIPMENT Figure 2: Internal Schematic Diagram Table 2: Order Codes SALES TYPE STE40NK90ZD MARKING E40NK90ZD PACKAGE ISOTOP PACKAGING TUBE Rev. 4 December 2004 1/10 www.DataSheet4U.com STE40NK90ZD Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (AC-...




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