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STE250N06

STMicroelectronics

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

www.DataSheet4U.com STE250N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE STE250N06 s s V...


STMicroelectronics

STE250N06

File Download Download STE250N06 Datasheet


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www.DataSheet4U.com STE250N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE STE250N06 s s VDSS 60 V R DS(on) < 0.004 Ω ID 250 A 4 3 s s s s s s s HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY (SEE STH80N06 FOR RATING) VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS EXTREMELY LOW Rth JUNCTION TO CASE VERY LOW DRAIN TO CASE CAPACITANCE VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALLY < 5 nH) ISOLATED PACKAGE UL RECOGNIZED (FILE No E81743) 1 2 ISOTOP INTERNAL SCHEMATIC DIAGRAM INDUSTRIAL APPLICATIONS: SMPS & UPS s MOTOR CONTROL s WELDING EQUIPMENT s OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS s ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( ) P tot T stg Tj V ISO Parameter Drain-Source Voltage (V GS = 0) Drain-Gate Voltage (R GS = 20 k Ω ) Gate-Source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Storage Temperature Max. Operating Junction Temperature Insulation Withstand Voltage (AC-RMS) o o Value 60 60 ± 20 250 155 750 450 3.6 -55 to 150 150 2500 Unit V V V A A A W W/o C o o C C V () Pulse width limited by safe operating area May 1995 1/8 www.DataSheet4U.com STE250N06 THERMAL DATA R thj-case R thc-h Thermal Resistance Junction-case Thermal Resistance Case-heatsink With Conductive Grease Applied Max Max 0.27 0.05 o o C/W C/W ...




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