®
STDID5B
N - CHANNEL 55V - 0.1 Ω - 12A TO-252 STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE STDID5B
www.DataSheet4U.com s TYPICAL
s
VDSS 55 V
R DS(on) < 0.12 Ω
ID 12 A
s
RDS(on) = 0.1 Ω APPLICATION ORIENTED CHARACTERIZATION ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL
1
3
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugge.
N-CHANNEL POWER MOSFET
®
STDID5B
N - CHANNEL 55V - 0.1 Ω - 12A TO-252 STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE STDID5B
www.DataSheet4U.com s TYPICAL
s
VDSS 55 V
R DS(on) < 0.12 Ω
ID 12 A
s
RDS(on) = 0.1 Ω APPLICATION ORIENTED CHARACTERIZATION ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL
1
3
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS
s
DPAK TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR VGS I D (* ) ID I DM ( • ) P tot EAS (1) T st g Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature
(1) starting Tj = 25 oC, ID =12A , VDD = 30V
o
Value 55 55 ± 20 12 8 48 35 0.23 25 -65 to 175 175
Unit V V V A A A W W/ o C mJ
o o
C C
(•) Pulse width limited by safe operating area
New RDS(on) spec. starting from July ’98
May 2000
1/6
STDID5B
THERMAL DATA
R thj-case R thj-amb Tl Thermal Resistance Junction-case Max Therma.