STD8N65M5

STB8N65M5, STD8N65M5, STF8N65M5 Datasheet N-channel 650 V, 0.56 Ω typ., 7 A MDmesh M5 Power MOSFETs in a D²PAK, DPAK and TO-220FP packages TAB 2 3 1 D2PAK TAB 23 1 DPAK 3 2 1 TO-220FP D(2, TAB) Features Order codes VDS @ TJ max. RDS(on) max. ID STB8N65M5 STD8N65M5 710 V 0.60 Ω 7A STF8N65M5 Extremely low RDS(on) Low gate charge and input capacitance Excellent switching performance 100% avalanche tested PTOT 70 W 70 W 25 W G(1) S(3) Applications Switching applications AM01475v1_noZen Description These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. Product status links STB8N65M5 STD8N65M5 STF8N65M5 DS6548 - Rev 6 - March 2022 For further information contact your local STMicroelectronics sales office. www.st.com STB8N65M5, STD8N65M5, STF8N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter D²PAK Value DPAK VGS Gate-source voltage ±25 ID Drain current (continuous) at TC = 25 °C 7 ID Drain current (continuous) at TC = 100 °C 4.4 IDM (2) Drain current (pulsed) 28 PTOT Total power dissipation at TC = 25 °C 70 dv/dt (3) Peak diode recovery voltage slope 15 VISO Insulation withstand voltage (RMS) from all three leads to extern...