2
Semiconductor
STD882D
NPN Silicon Transistor
Description
• • • • Suitable for low voltage large current drivers Exc...
2
Semiconductor
STD882D
NPN Silicon Transistor
Description
Suitable for low
voltage large current drivers Excellent hFE Linearity Complementary pair with STB772D Switching Application
Features
Low collector saturation
voltage VCE(sat)=0.4V(Max.)
Ordering Information
Type NO. STD882D Marking STD882 Package Code D-PAK
Outline Dimensions
unit :
mm
PIN Connections 1. Base 2. Collector 3. Emitter
KST-D003-000
1
STD882D
Absolute maximum ratings
Characteristic
Collector-Base
voltage Collector-Emitter
voltage Emitter-Base
voltage Collector current(DC) Collector current(Pulse) * Collector dissipation Junction temperature Storage temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC(DC) IC(Pulse) * PC Tj Tstg
Ratings
40 15 7 5 8 15 150 -55~150
Unit
V V V A A W °C °C
* Pulse Test : Pulse Width=10ms (Max.), Duty Cycle=30%(Max.)
Electrical Characteristics
Characteristic
Collector-Base breakdown
voltage Collector-Emitter breakdown
voltage Emitter-Base breakdown
voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation
voltage Transition frequency Collector output capacitance
(Ta=25°C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE hFE fT Cob
1 2
Test Condition
IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=30V, IE=0 VEB=5V, IC=0 VCE=2V, IC=0.5A VCE=2V, IC=2A IC=3A, IB=100mA VCE=6V, IE=-50mA VCB=20V, IE=0, f=1MHz
Min. Typ. Max.
40 15 7 160 100 150 0.1 0.1 320 0.4 50
Unit
V V V µA µA V MHz pF
VCE(sat)
KST-D003-000
2
STD882D
Ele...