STD840DN40

STD840DN40 Dual NPN high voltage transistors in a single package Preliminary data Features ■ ■ ■ ■ Low VCE(sat) Simplified circuit design Reduced component count Fast switching speed 8 4 1 Applications ■ ■ Compact fluorescent lamp (CFL) 220 V mains Electronic ballast for fluorescent lighting DIP-8 Description The device is a dual NPN high voltage power transistors manufactured in multi-epitaxial planar technology. It is housed in dual island DIP-8 package with separated terminals for high assembly flexibility. Figure 1. Internal schematic diagram www.DataSheet4U.com Table 1. Device summary Marking D840DN40 Package DIP-8 Packaging Tube Order code STD840DN40 November 2009 Doc ID 16796 Rev 1 1/9 www.st.com 9 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Electrical ratings STD840DN40 1 Electrical ratings Table 2. Symbol VCBO VCEO VEBO IC ICM IB IBM PTOT TSTG TJ Absolute maximum ratings Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0, IB = 1.5 A, tp < 10 ms) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 5 ms) Total dissipation at Tamb = 25 °C single transistor Total dissipation at Tamb = 25 °C both transistors Storage temperature Max. operating junction temperature Value 700 400 V(BR)EBO 4 8 1.5 3 TBD TBD -65 to 150 150 Unit V V V A A A A W W °C °C Table 3. Symbol Rt...