isc N-Channel MOSFET Transistor
STD7NM60N
FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(...
isc N-Channel
MOSFET Transistor
STD7NM60N
FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source
Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 900mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source
Voltage
VGS
Gate-Source
Voltage-Continuous
ID
Drain Current-Continuous
IDM
Drain Current-Single Pluse
PD
Total Dissipation @TC=25℃
TJ
Max. Operating Junction Temperature
Tstg
Storage Temperature
VALUE UNIT
600
V
±25
V
5
A
20
A
45
W
150
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
2.78
℃/W
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isc N-Channel
MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown
Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold
Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 2.5A
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate
Voltage Drain Current
VSD
Forward On-
Voltage
VGS= ±20V;VDS= 0
VDS= Max rating; VDS= Max rating; Tj= 125℃
IS= 5A; VGS=0
STD7NM60N
MIN MAX UNIT
600
V
2
4
V
900
mΩ
±100 nA
1 100
μA
1.3
V
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time wit...