STD361

www.DataSheet4U.com Semiconductor STD361 NPN Silicon Transistor Description Extremely low collector-to-emitter saturation voltage ( VCE(SAT)=0.2V Typ. @IC/IB=3A/150 ㎃) Suitable for low voltage large current drivers Switching Application Ordering Information Type NO. STD361 Marking YA Package Code SOT-89 Outline Dimensions unit : mm PIN Connections 1. Base 2. Collector 3. Emitter KST-8007-002 1 STD361 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector power dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PC PC* TJ Tstg Ratings 40 15 7 5 0.5 2 150 -55~150 Unit V V V A W °C °C * : When mounted on 40×40×0.8 ㎜ ceramic substate Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) fT Cob Test Condition IC=50 ㎂, IE=0 IC=1 ㎃, IB=0 IE=50 ㎂, IC=0 VCB=30V, IE=0 VEB=5V, IC=0 VCE=2V, IC=500 ㎃ VCE=2V, IC=3A IC=3A, IB=150 ㎃ VCE=6V, IE=-50 ㎃ VCB=20V, IE=0, f=1 ㎒ Min. Typ. Max. 40 15 7 160 40 150 0.1 0.1 320 0.3 50 Unit V V V ㎂ ㎂ V ㎒ ㎊ KST-8007-002 2 STD361 Electrical Characteristic Curves Fig. 1 Pc - Ta ㎽ Fig. 2 hFE - IC ㎃ Fig. 3 VCE...