STD35NF06L

www.DataSheet4U.com STD35NF06L N-CHANNEL 60V - 0.014 Ω - 35A DPAK STripFET™ II POWER MOSFET TYPE STD35NF06L s s s s VDSS 60 V RDS(on) < 0.017 Ω ID 35 A TYPICAL RDS(on) = 0.014 Ω LOW THRESHOLD DRIVE GATE CHARGE MINIMIZED SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4") 3 1 DPAK TO-252 (Suffix “T4”) DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s DC-AC CONVERTERS s AUTOMOTIVE SWITCHING APPLICATION Ordering Information SALES TYPE STD35NF06LT4 MARKING D35NF06L PACKAGE TO-252 PACKAGING TAPE & REEL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM() Ptot dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 60 60 ± 16 35 24.5 140 80 0.67 5 280 -55 to 175 (1) ISD ≤35A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Starting T j = 25 oC, ID = 30A, VDD =30V Unit V V V A A A W W/°C V/ns mJ ...