STD10N10

STU10N10 Sa mHop Microelectronics C orp. STD10N10Green Product Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 100V 620 @ VGS=10V 5A 721 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO - 252AA( D- PAK ) G DS STD SERIES TO - 251( I - PAK ) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c TC=25°C TC=70°C IDM -Pulsed a c EAS Single Pulse Avalanche Energy d PD Maximum Power Dissipation TC=25°C TC=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient Limit 100 ±20 5 4 14 4 42 27 -55 to 150 3 50 Units V V A A A mJ W W °C °C/W °C/W Details are subject to change without notice. 1 Jun,12,2014 www.samhop.com.tw STU10N10 STD10N10 Ver 1.0 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Symbol Parameter Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=10mA VDS=80V , VGS=0V VGS= ±20V , VDS=0V 100 ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS b CISS Input Capacitanc...