Semiconductor
STC403D
NPN Silicon Transistor
Features
• Power Transistor General Purpose application • Low saturation...
Semiconductor
STC403D
NPN Silicon Transistor
Features
Power Transistor General Purpose application Low saturation
voltage : VC E ( S A T )=0.4V Max. High
Voltage : VC E O =60V Min.
Ordering Information
Type NO. STC403D Marking STC403 Package Code D -PAK
Outline Dimensions
unit : mm
PIN Connections 1. Base 2. Collector 3. Emitter
KST--D003-000
1
STC403D
Absolute maximum ratings
Characteristic
Collector-Base
voltage Collector-Emitter
voltage Emitter-base
voltage Collector current Collector dissipation (Tc=25¡É) Junction temperature Storage temperature
Symbol
VC B O VC E O VE B O IC PC Tj T stg
Ratings
80 60 5 3 15 150 -55~150
Unit
V V V A W °C °C
Electrical Characteristics
Characteristic
Collector-Emitter breakdown
voltage Collector cut-off current Emitter cut-off current DC current gain Base-Emitter on
voltage Collector-Emitter saturation
voltage Transition frequency Collector output capacitance Turn-on Time Switching Time Storage Time Fall Time
Symbol
BVCEO ICBO IEBO h FE * VBE(ON) VCE(sat) fT C ob Ton Tstg Tf
Test Condition
IC =50mA, IB=0 VCB=60V, IE=0 VEB=5V, IC =0 VCE=5V, IC =0.5A VCE=5V, IC =0.5A IC =2A, IB=0.2A VCB=5V, IC =0.5A VCB=10V, IE=0, f=1MHz
Min.
60 200 -
Typ.
0.7 0.4 30 35 0.65 1.3 0.65
Max.
50 50 400 1 1 -
Unit
V µA µA V V MH pF
§Á
* HFE rank : 200~400 Only
KST--D003-000
2
STC403D
Electrical Characteristic Curves
Fig. 1 PC - Ta Fig. 2 VCE - IC
Fig. 3 hFE-IC
Fig. 5 IC - VCE
Fig. 5 Safe operating Area
*
Continuous
*
*
)
1
K...