STB75NF75L

N-CHANNEL 75V - 0.009 Ω - 75A D2PAK/I2PAK/TO-220 STripFET™ II POWER MOSFET TYPE STB75NF75L/-1 STP75NF75L s s s s STP75NF75L STB75NF75L STB75NF75L-1 VDSS 75 V 75 V RDS(on) <0.011 Ω <0.011 Ω ID 75 A 75 A 3 1 TYPICAL RDS(on) = 0.009Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE 3 12 D2PAK TO-263 I2PAK TO-262 DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SOLENOID AND RELAY DRIVERS s DC MOTOR CONTROL s DC-DC CONVERTERS s AUTOMOTIVE ENVIRONMENT s ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID() ID IDM() Ptot dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 75 75 ± 15 75 70 300 300 2 20 680 -55 to 175 Unit V V V A A A W W/°C V/ns mJ °C () Current limited by package () Pulse width limited by safe operati...