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STB25NM60ND

Part Number	STB25NM60ND
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Dec 4, 2020
Datasheet	STB25NM60ND PDF File

Features

·Drain Current –ID=21A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 160mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

DESCRIPTION ...

Similar Datasheet

STB25NM60ND
N-channel MOSFET
(STMicroelectronics)

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