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STB21NM60ND Datasheet

Part Number STB21NM60ND
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel MOSFET
Datasheet STB21NM60ND DatasheetSTB21NM60ND Datasheet (PDF)

STB21NM60ND, STF21NM60ND, STP21NM60ND, STW21NM60ND N-channel 600 V, 0.17 Ω typ., 17 A FDmesh™ II Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data TAB 3 1 D2PAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram ' ĆRUĆ7$% Features Order codes STB21NM60ND STF21NM60ND STP21NM60ND STW21NM60ND VDSS @ TJmax 650 V 650 V 650 V 650 V RDS(on) max 0.22 Ω 0.22 Ω 0.22 Ω 0.22 Ω ID 17 A 17 A 17 A 17 A • Intrinsic fast-recovery .

  STB21NM60ND   STB21NM60ND






Part Number STB21NM60ND
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet STB21NM60ND DatasheetSTB21NM60ND Datasheet (PDF)

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STB21NM60ND ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=125℃ Drain Current-.

  STB21NM60ND   STB21NM60ND







N-channel MOSFET

STB21NM60ND, STF21NM60ND, STP21NM60ND, STW21NM60ND N-channel 600 V, 0.17 Ω typ., 17 A FDmesh™ II Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data TAB 3 1 D2PAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram ' ĆRUĆ7$% Features Order codes STB21NM60ND STF21NM60ND STP21NM60ND STW21NM60ND VDSS @ TJmax 650 V 650 V 650 V 650 V RDS(on) max 0.22 Ω 0.22 Ω 0.22 Ω 0.22 Ω ID 17 A 17 A 17 A 17 A • Intrinsic fast-recovery body diode • Worldwide best RDS(on)*area amongst the fast recovery diode devices • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance • Extremely high dv/dt and avalanche capabilities Applications *  • Switching applications Description 6  These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced $0Y using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. Order codes STB21NM60ND STF21NM60ND STP21NM60ND STW21NM60ND Table 1. Device summary Marking Package 21NM60ND 21NM60ND 21NM60ND 21NM60ND D²PAK TO-220FP TO-220 TO-247 Packaging Tape and reel Tube Tube Tube March 2013 This is information on a product in full production. DocID13781 Rev 5 1/21 www.st.com 21 Contents Contents STB21NM60.


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