STB205L

STB205L PNP Silicon Transistor Descriptions Suitable for low voltage large current drivers Excellent hFE Linearity. Switching Application PIN Connection Features High hFE : hFE=200~400 Low collector saturation voltage. : VCE(sat)=-0.5V(MAX.) TO -92L 1: Emitter 2 :Collector 3: Base Ordering Information Type NO. Marking Package Code STB205L STB 205 YWW TO-92L STB205: DEVICE CODE, YWW(Y : Year code, WW : Weekly code) Absolute Maximum Ratings (Ta=25°C) Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range * : Single pulse, tp= 300 ㎲ VCBO VCEO VEBO IC ICP* PC TJ Tstg -35 -20 -5 -5 -10 1 150 -55~150 V V V A(DC) A(Pulse) W °C °C Characteristic Thermal resistance Symbol Rth(J-a) Typ. - Max 125.0 Unit ℃/W KSD-T0D010-001 1 Electrical Characteristics Characteristic Symbol Test Condition Collecto...