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STB19NB20
N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET
TYPE ST B19NB20
s s s s s s
V DSS 200 V
R DS(on) < 0.180 Ω
ID 19 A
TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE
3 1
DESCRIPTION Using the...
