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STB190NF04-1

ST Microelectronics

N-CHANNEL POWER MOSFET

www.DataSheet4U.com N-CHANNEL 40V - 3.9 mΩ - 120A D2PAK/I2PAK/TO-220 STripFET™ II POWER MOSFET TYPE STB190NF04/-1 STP19...


ST Microelectronics

STB190NF04-1

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www.DataSheet4U.com N-CHANNEL 40V - 3.9 mΩ - 120A D2PAK/I2PAK/TO-220 STripFET™ II POWER MOSFET TYPE STB190NF04/-1 STP190NF04 s s s STP190NF04 STB190NF04 STB190NF04-1 PRELIMINARY DATA VDSS 40 V 40 V RDS(on) <0.0043 Ω <0.0043 Ω ID 120 A 120 A 3 1 TYPICAL RDS(on) =3.9 mΩ STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED 3 12 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURENT, HIGH SWITCHING SPEED s AUTOMOTIVE D2PAK TO-263 I2PAK TO-262 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID() ID IDM() Ptot dv/dt (1) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 40 40 ± 20 120 120 480 310 2.07 7 860 -55 to 175 () Pulse width limited by safe operating area. Unit V V V A A A W W/°C V/ns mJ °C EAS (1) Tstg Tj () Current limited by package February 2004 1) ISD ≤190A, di/dt ≤600A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMA...




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