STB18NF25
Datasheet
Automotive-grade N-channel 250 V, 140 mΩ typ., 17 A STripFET II Power MOSFET in a D²PAK package
TAB 2 3 1
D²PAK
D(2, TAB)
Features
Order code STB18NF25
VDS 250 V
RDS(on) max. 165 mΩ
ID 17 A
• AEC-Q101 qualified • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge
Applications
• Switching applications
G(1)
Description
S(3)
This Power MOSFET has been developed using STMicroelectronics' unique
AM01475v1_noZen
STripFET process, which is specificall.
N-Channel MOSFET
STB18NF25
Datasheet
Automotive-grade N-channel 250 V, 140 mΩ typ., 17 A STripFET II Power MOSFET in a D²PAK package
TAB 2 3 1
D²PAK
D(2, TAB)
Features
Order code STB18NF25
VDS 250 V
RDS(on) max. 165 mΩ
ID 17 A
• AEC-Q101 qualified • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge
Applications
• Switching applications
G(1)
Description
S(3)
This Power MOSFET has been developed using STMicroelectronics' unique
AM01475v1_noZen
STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced
high-efficiency isolated DC-DC converters for telecom and computer applications,
and applications with low gate charge driving requirements.
Product status link STB18NF25
Product summary
Order code
STB18NF25
Marking
18NF25
Package
D²PAK
Packing
Tape and reel
DS14370 - Rev 1 - July 2023 For further information contact your local STMicroelectronics sales office.
www.st.com
STB18NF25
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage
VGS
Gate-source voltage
Drain current (continuous) at TC = 25 °C ID
Drain current (continuous) at TC = 100 °C
IDM (1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
dv/dt (2) Peak diode recovery voltage slope
TJ
Operating junction temperature range
Tstg
Storage temperature range
1. Pulse width limited by safe operat.