STB14NM50N
N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II Power MOSFET in a D²PAK package
Datasheet - production data
T...
STB14NM50N
N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II Power
MOSFET in a D²PAK package
Datasheet - production data
TAB
3 1
D2PAK
Features
Order code VDS @ TJmax RDS(on) max ID
STB14NM50N 550 V
0.32 Ω
12 A
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
Applications
Switching applications
Figure 1. Internal schematic diagram
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Description
This device is an N-channel Power
MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
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Order code STB14NM50N
Table 1. Device summary
Marking
Package
14NM50N
D²PAK
Packaging Tape and reel
June 2014
This is information on a product in full production.
DocID024666 Rev 1
1/15
www.st.com
Contents
Contents
STB14NM50N
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4
Package mechanical data . . . . . . . . . . . . ...