STB13007DT4

www.DataSheet4U.com STB13007DT4 High voltage fast-switching NPN power transistor General features ■ Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range High voltage capability Integrated free-wheeling diode Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Fully characterized at 125 °C Large RBSOA In compliance with the 2002/93/EC European Directive 1 D2PAK (T0-263) ■ ■ ■ ■ ■ ■ ■ ■ 3 Internal schematic diagram Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. Applications ■ ■ Electronic transformers for halogen lamps Switch mode power supplies Order codes Part Number STB13007DT4 Marking B13007D Package D 2PAK Packing Tape & Reel June 2006 Rev 1 1/10 www.st.com 10 STB13007DT4 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 2.2 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 4 Package mechanical data . . . . . . . . . . . . . . . ...