STA508A

MOS FET Array STA508A Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse)*1 PT Ratings 120 ± 20 ±6 ± 10 4 (Ta = 25ºC) 20 (Tc = 25ºC) EAS *2 80 mJ Tch ºC 150 Tstg ºC –55 to +150 *1 PW 100µs, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 50Ω (Ta=25ºC) Unit V V A A W W Electrical Characteristics Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD Test Conditions ID = 100µA, VGS = 0V VGS = ± 20V VDS = 120V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 4.0A VGS = 10V, ID = 4.0A VGS = 4V, ID = 4.0A VDS = 10V f = 1.0MHz VGS = 0V ID = 4A VDD 12V RL = 3Ω VGS = 5V RG = 50Ω min 120 ±5 100 2.0 0.15 0.2 400 130 30 100 300 250 200 1.0 0.2 0.25 Ratings typ max (Ta=25ºC) Unit External Dimensions STA4 (LF412) 25.25 ±0.2 1.0 5.0 s ID — VDS Characteristics 16 12 8 4 0 0 1 s R DS (on) — TC Characteristics 0.45 0.40 ID = 4A RDS (on) (Ω) Re (yfs) (S) 0.30 0.20 0.10 0 –50 m o .c U 4 t e e h S a t a .D w w w ISD = 6A, VGS = 0V 1.5 V µA µA V S Ω Ω pF pF pF ns ns ns ns V ±0.2 ±0.2 9.0 ±0.2 b a 11.3 3.5 ±0.5 2.3 1.0 ±0.25 0.5 ±0.15 (2.54) 0 ±0.3 0 ±0.3 9 2.54=22.86 ±0.05 ±0.15 1 2 3 4 5 6 7 8 9 10 S G D G D G D G D S a) Type No. b) Lot No. (Unit: mm) s ID — VGS Characteristics 10 VDS = 10V s R DS (on) — I D Characteristics 0.30 0.25 0.20 0.15 VGS = 10V 8 VGS = 4.5V VGS = 4V 6 4 Ta = –55ºC 25ºC 75ºC 150ºC RDS (on) (Ω) ID (A) ID (A) VGS = 10V 0.10 0.05 2 2 3 4 5 6 0 0 1.0 2.0 3.0 4.0 0 ...