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ST93CS47 Datasheet

Part Number ST93CS47
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description (ST93CS46 / ST93CS47) 1K 64 x 16 SERIAL MICROWIRE EEPROM
Datasheet ST93CS47 DatasheetST93CS47 Datasheet (PDF)

www.DataSheet4U.com ST93CS46 ST93CS47 1K (64 x 16) SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS46 – 2.5V to 5.5V for the ST93CS47 USER DEFINED WRITE PROTECTED AREA PAGE WRITE MODE (4 WORDS) SEQUENTIAL READ OPERATION 5ms TYPICAL PROGRAMMING TIME ST93CS46 and ST93CS47 are replaced by the M93S46 8 1 PSDIP8 (B).

  ST93CS47   ST93CS47






Part Number ST93CS46
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description (ST93CS46 / ST93CS47) 1K 64 x 16 SERIAL MICROWIRE EEPROM
Datasheet ST93CS47 DatasheetST93CS46 Datasheet (PDF)

www.DataSheet4U.com ST93CS46 ST93CS47 1K (64 x 16) SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS46 – 2.5V to 5.5V for the ST93CS47 USER DEFINED WRITE PROTECTED AREA PAGE WRITE MODE (4 WORDS) SEQUENTIAL READ OPERATION 5ms TYPICAL PROGRAMMING TIME ST93CS46 and ST93CS47 are replaced by the M93S46 8 1 PSDIP8 (B).

  ST93CS47   ST93CS47







(ST93CS46 / ST93CS47) 1K 64 x 16 SERIAL MICROWIRE EEPROM

www.DataSheet4U.com ST93CS46 ST93CS47 1K (64 x 16) SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS46 – 2.5V to 5.5V for the ST93CS47 USER DEFINED WRITE PROTECTED AREA PAGE WRITE MODE (4 WORDS) SEQUENTIAL READ OPERATION 5ms TYPICAL PROGRAMMING TIME ST93CS46 and ST93CS47 are replaced by the M93S46 8 1 PSDIP8 (B) 0.4mm Frame 8 1 SO8 (M) 150mil Width Figure 1. Logic Diagram DESCRIPTION The ST93CS46 and ST93CS47 are 1K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology. The memory is accessed through a serial input D and output Q. The 1K bit memory is organized as 64 x 16 bit words.The memory is accessed by a set of instructions which include Read, Write, Page Write, Write All and instructions used to set the memory protection. A Read instruction loads the address of the first word to be read into an internal address pointer. Table 1. Signal Names S D Q C PRE W VCC VSS Chip Select Input Serial Data Input Serial Data Output Serial Clock Protect Enable Write Enable Supply Voltage Ground VCC D C S PRE W ST93CS46 ST93CS47 Q VSS AI00884B June 1997 This is information on a product still in production bu t not recommended for new de signs. 1/16 www.DataSheet4U.com ST93CS46, ST93CS47 Figure 2A. DIP Pin Connecti.


2009-09-16 : SM5950BM    SM5951A    SM5956A    ST93CS46    ST93CS47    ST93CS56    ST93CS57    ST93CS66    ST93CS67    UPA901TU   


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