DatasheetsPDF.com

ST2SC930E1 Datasheet

Part Number ST2SC930E1
Manufacturers SEMTECH ELECTRONICS
Logo SEMTECH ELECTRONICS
Description NPN Silicon Epitaxial Planar Transistor
Datasheet ST2SC930E1 DatasheetST2SC930E1 Datasheet (PDF)

www.DataSheet4U.com ST 2SC930C1…F1 NPN Silicon Epitaxial Planar Transistor for FM RF amp, mixer, osc, converter and IF amplifier. The transistor is subdivided into four groups C1, D1, E1 and F1, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Po.

  ST2SC930E1   ST2SC930E1






NPN Silicon Epitaxial Planar Transistor

www.DataSheet4U.com ST 2SC930C1…F1 NPN Silicon Epitaxial Planar Transistor for FM RF amp, mixer, osc, converter and IF amplifier. The transistor is subdivided into four groups C1, D1, E1 and F1, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC Ptot Tj TS Value 30 20 5 30 250 125 -55 to +125 Unit V V V mA mW O C C O SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/05/2003 www.DataSheet4U.com ST 2SC930C1…F1 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=6V, IC=1mA Current Gain Group C1 D1 E1 F1 Collector Cutoff Current at VCB=10V Emitter Cutoff Current at VEB=4V Gain Bandwidth Product at VCE=6V, IC=1Ma Reverse Transfer Capacitance at VCB=6V, f=1MHz Base to Collector Time Constant at VCB=6V, IC=1mA, f=31.9MHz Noise Figure at VCB=6V, IC=1mA, f=100MHz Turn-on Time at VIN=+12V, VBE=-3V,appointed circuit Turn-off Time at VIN=-12V, VBE=+3V, appointed circuit toff 30 ns ton 30 ns NF 4 dB Rbb․Cc 20 36 ps Cre 1 1.3 1.8 pF fT 170 300 MHz IEBO 1 μA ICBO 1 μA hFE hFE hFE hFE 40 60 100 160 80 120 200 320 Min. Typ. Max. Unit SEMTEC.


2009-09-15 : FYS-10011CX    FYS-10011DX    2SC936    ST2SC930C1    ST2SC930D1    ST2SC930E1    ST2SC930F1    ST2SC945    STR910FAM32    STR910FAW32   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)