www.DataSheet4U.com
ST 2SC2715
NPN Silicon Epitaxial Planar Transistor
for high frequency amplifier applications for FM...
www.DataSheet4U.com
ST 2SC2715
NPN Silicon Epitaxial Planar Transistor
for high frequency amplifier applications for FM IF, OSC stage and AM CONV. IF stage The transistor is subdivided into three groups, R, O and Y, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base
Voltage Collector Emitter
Voltage Emitter Base
Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC IB Ptot Tj TS
TO-92 Plastic Package Weight approx. 0.19g
Value 35 30 4 50 10 300 125 -55 to +125
Unit V V V mA mA mW
O
C C
O
Characteristics at Tamb = 25 OC Parameter DC Current Gain at VCE = 12 V, IC = 2 mA Current Gain Group R O Y Symbol hFE hFE hFE ICBO IEBO VCE(sat) VBE(sat) fT Cob Gpe Min. 40 70 120 100 27 Typ. 2 30 Max. 80 140 240 0.1 0.1 0.4 1 400 3.2 33 Unit µA µA V V MHz pF dB
Collector Cutoff Current at VCB = 35 V Emitter Cutoff Current at VEB = 4 V Collector Emitter Saturation
Voltage at IC = 10 mA, IB = 1 mA Base Emitter Saturation
Voltage at IC = 10 mA, IB = 1 mA Current Gain Bandwidth Product at VCE = 10 V, IC = 1 mA Output Capacitance at VCB = 10 V, f = 1 MHz Power Gain at VCE = 6 V, -IE = 1 mA, f = 10.7 MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 06/05/2006
www.DataSheet4U.com
ST 2SC2715
10
Ic[mA], COLLECTOR CURRENT
I B =90 A I B =80 A
h FE , DC CUR...