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ST 2SC1359
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications. Th...
www.DataSheet4U.com
ST 2SC1359
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications. The transistor is subdivided into one group, according to its DC current gain.
On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base
Voltage Collector Emitter
Voltage Emitter Base
Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Tamb = 25 OC Parameter DC Current Gain at VCE=6V, IC=1mA Collector Base Breakdown
Voltage at IC=100µA Collector Emitter Breakdown
Voltage at IC=10mA Emitter Base Breakdown
Voltage at IE=10µA Collector Cutoff Current at VCB=30V Emitter Cutoff Current at VEB=3V Collector Saturation
Voltage at IC=100mA, IB=10mA Gain Bandwidth Product at VCE=6V, IC=10mA Output Capacitance at VCB=6V, f=1MHz Noise Figure at VCE=6V, IE=0.5mA, f=1KHz, RS=500Ωat Symbol hFE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) fT COB NF Min. 150 30 20 5 Typ. 125 1.8 4 Max. 650 0.1 0.1 0.3 Unit V V V µA µA V MHz pF dB Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 30 20 5 100 250 150 -55 to +150 Unit V V V mA mW
O O
C C
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 02/12/2005
www.DataSheet4U.com
ST 2SC1359
Total power dissipation vs. ambient temperature 300
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