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ST2305

Stanson Technology
Part Number ST2305
Manufacturer Stanson Technology
Description P Channel Enchancement Mode MOSFET
Published Jun 18, 2006
Detailed Description www.DataSheet4U.com P Channel Enchancement Mode MOSFET -3.5A DESCRIPTION ST2305 The ST2305 is the P-Channel logic enh...
Datasheet PDF File ST2305 PDF File

ST2305
ST2305


Overview
www.
DataSheet4U.
com P Channel Enchancement Mode MOSFET -3.
5A DESCRIPTION ST2305 The ST2305 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package.
PIN CONFIGURATION SOT-23-3L 3 FEATURE z -10V/-3.
5A, RDS(ON) = 50m-ohm @VGS = -4.
5V z -10V/-3.
0A, RDS(ON) = 70m-ohm @VGS = -2.
5V z -10V/-2.
0A, R...



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