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P Channel Enchancement Mode MOSFET -2.8A DESCRIPTION
ST2301
The ST2301 is the P-Channel logic enh...
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P Channel Enchancement Mode
MOSFET -2.8A DESCRIPTION
ST2301
The ST2301 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low
voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package.
PIN CONFIGURATION SOT-23-3L 3
FEATURE z -20V/-2.8A, RDS(ON) = 120m-ohm @VGS = -4.5V z -20V/-2.0A, RDS(ON) = 170m-ohm @VGS = -2.5V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-23-3L package design
D G
1
1.Gate 2.Source
S
2
3.Drain
3
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STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
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P Channel Enchancement Mode
MOSFET -2.8A
ST2301
ABSOULTE MAXIMUM RATINGS (Ta = 25¢J Unless otherwise noted ) Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current (TJ=150¢J ) TA=25¢J TA=70¢J Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=2...