ST2301

www.DataSheet4U.com P Channel Enchancement Mode MOSFET -2.8A DESCRIPTION ST2301 The ST2301 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package. PIN CONFIGURATION SOT-23-3L 3 FEATURE z -20V/-2.8A, RDS(ON) = 120m-ohm @VGS = -4.5V z -20V/-2.0A, RDS(ON) = 170m-ohm @VGS = -2.5V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-23-3L package design D G 1 1.Gate 2.Source S 2 3.Drain 3 S: Subcontractor Y: Year Code 4U 1 .co m S01YA 2 A: Process Code ata w.D Sh STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 1 ww eet www.DataSheet4U.com P Channel Enchancement Mode MOSFET -2.8A ST2301 ABSOULTE MAXIMUM RATINGS (Ta = 25¢J Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150¢J ) TA=25¢J TA=70¢J Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=2...