®
ST1803DHI
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s
s
s s s s s
NEW SERIES, ENHANCHED PERFORMANCE FULLY ...
®
ST1803DHI
HIGH
VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s
s
s s s s s
NEW SERIES, ENHANCHED PERFORMANCE FULLY INSULATED PACKAGE FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH
VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS
1
3 2
APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOR TV DESCRIPTION The ST1803DHI is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation.
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
RBE =25 Ω
T yp.
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB P t ot T stg Tj Parameter Collector-Base
Voltage (IE = 0) Collector-Emitter
Voltage (I B = 0) Emitt er-Base
Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Total Dissipation at T c = 25 o C St orage Temperature Max. Operating Junction T emperature Value 1500 600 7 10 15 4 50 -65 to 150 150 Uni t V V V A A A W
o o
C C
January 2000
1/6
ST1803DHI
THERMAL DATA
R t hj-ca se Thermal Resistance Junction-case Max 2.5
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CES I EBO V CE(sat )∗ V BE(s at)∗ h FE∗ VF BV EB0 Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Saturation
Voltage Base-Emitter Saturation
Voltage DC Current G ain Diode F orward
Voltage Emitter-Breakdown
Voltage INDUCTIVE LOAD Storage Time Fall Time Test Cond ition s V CE...