Part Number
|
SSW1N60A |
Manufacturer
|
Fairchild Semiconductor |
Description
|
Advanced Power MOSFET |
Published
|
Jan 3, 2006 |
Datasheet
|
SSW1N60A PDF File
|
Features
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 9.390 Ω (Typ.)
SSW/I1N60A
BVDSS = 600 V RDS(on) = 12 Ω...
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