SSR04C60CT

www.DataSheet4U.com Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com World’s First Silicon Carbide Centertap Rectifier SSR04C60CT Series 4A / 600V Schottky Silicon Carbide Centertap Rectifier Features: World's First Hermetic SiC Centertap Rectifier High Voltage, 600V Very High Operating Temperature, 250ºC No Recovery Time (tfr or trr) High Current Operation, 4A Hermetically Sealed Packaging TX, TXV, S Level screening available DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SSR04C 60 CT S.5 TX │ │ │ └ Screening __ = Not Screened │ │ │ TV = TX Level │ │ │ TXV= TXV Level │ │ │ S = S Level │ │ │ │ │ └ Package 2/ S.5 = SMD.5 │ │ /39 = Low Profile TO-39 │ │ │ └ Configuration CT = Centertap │ └ Voltage 50 = 500 V 60 = 600 V Maximum Ratings Symbol Value Units Peak Repetitive and Peak Surge Reverse Voltage Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave) Non Repetitive Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on IO, per leg) Power Dissipation Operating & Storage Temperature 4/ Maximum Thermal Resistance Junction to Case TO-39 (/39) SSR04C50 SSR04C60 Per Leg Total VRRM VRSM Io IFSM PD Top & Tstg 500 600 2 4 4 1.3 5 -55 to +250 175 45 Volts Amps Amps Watts ºC ºC/W Free Air, TA = 25ºC Heatsunk, TC = 25ºC Junction to Ambient Junction to Case SMD .5 (S.5) RθJC 1 NOTE: All specifications are subject to ...