SSP2N60A

www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 Ω (Typ.) 1 2 3 SSP2N60A BVDSS = 600 V RDS(on) = 5.0 Ω ID = 2 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 oC ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds 1 O o o Value 600 2 1.3 6 + _ 30 131 2 5.4 3.0 54 0.43 - 55 to +150 Units V A A V mJ A mJ V/ns W W/ C o DataSheet4U.com Gate-to-Source Voltage DataShee O 1 O 1 O 3 O 2 o C 300 Thermal Resistance Symbol R R θJC θCS Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -- Max. 2.32 -62.5 Units o C /W R θJA Rev. B ©1999 Fairchild Semiconductor Corporation DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com SSP2N60A Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Thresho...