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SSM9987GM Datasheet

Part Number SSM9987GM
Manufacturers Silicon Standard
Logo Silicon Standard
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet SSM9987GM DatasheetSSM9987GM Datasheet (PDF)

SSM9987GM N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Low Gate Charge Single Drive Requirement Surface Mount Package DESCRIPTION D2 D2 D1 D1 SO-8 G2 S2 G1 S1 BVDSS RDS(ON) ID 80V 90mΩ 3.5A The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. Pb-free; RoHS-compliant ABSOLUTE MAXIMUM RATINGS G1 D1 G2 S1 D2 S2 Symbol VDS VGS ID@TA=25℃ ID@TA=.

  SSM9987GM   SSM9987GM






Part Number SSM9987GH
Manufacturers Silicon Standard
Logo Silicon Standard
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet SSM9987GM DatasheetSSM9987GH Datasheet (PDF)

SSM9987GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Low Gate Charge Single Drive Requirement Fast Switching Performance DESCRIPTION D G S BVDSS RDS(ON) ID 80V 90mΩ 15A The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-252(H) The TO-252 package is universally preferred for all commercialindustrial surface mount applications and su.

  SSM9987GM   SSM9987GM







N-CHANNEL ENHANCEMENT MODE POWER MOSFET

SSM9987GM N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Low Gate Charge Single Drive Requirement Surface Mount Package DESCRIPTION D2 D2 D1 D1 SO-8 G2 S2 G1 S1 BVDSS RDS(ON) ID 80V 90mΩ 3.5A The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. Pb-free; RoHS-compliant ABSOLUTE MAXIMUM RATINGS G1 D1 G2 S1 D2 S2 Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Rating 80 ±25 3.5 2.8 30 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ THERMAL DATA Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Max. Value 62.5 Unit ℃/W 05/31/2007 .


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