SSM9926GEO
N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Low on-resistance Capable of 2.5V gate drive Low drive current Surf...
SSM9926GEO
N-CHANNEL ENHANCEMENT-MODE POWER
MOSFETS
Low on-resistance Capable of 2.5V gate drive Low drive current Surface-mount package
G2 S2 S2 D2
TSSOP-8
G1 S1 S1 D1
Description
Power
MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
RoHS compliant.
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-amb
Thermal Resistance Junction-ambient
BV DSS R DS(ON) ID
20V 28mΩ 4.6A
D1 D2 G1 G2
S1 S2
Rating 20 ± 12 4.6 3.7 20 1
0.008 -55 to 150 -55 to 150
Units V V A A A W
W/°C °C °C
Max.
Value 125
Unit °C/W
Rev.2.10 1/29/2005
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