SSM9916J

SSM9916H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance Capable of 2.5V gate drive Low drive current Simple drive requirement Description D G S Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TC=25°C ID @ TC=125°C IDM PD @ TC=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient BV DSS RDS(ON) ID 18V 25mΩ 35A GD S TO-252(H) GD S TO-251(J) Rating 18 ± 12 35 16 90 50 0.4 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Max. Max. Value 2.5 110 U...