SSM9915H

www.DataSheet4U.com SSM9915H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance Capable of 2.5V gate drive Low drive current Simple drive requirement G S D BV DSS R DS(ON) ID 20V 50mΩ 20A Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=125℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 1 Rating 20 ± 10 20 16 41 26 0.2 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ DataShee DataSheet4U.com Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.8 110 Unit ℃/W ℃/W DataSheet4U.com Rev.2.01 6/26/2003 www.SiliconStandard.com 1 of 6 DataSheet 4 U .com www.DataSheet4U.com SSM9915H,J Electrical Characteristics @ T j=25oC (unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 20 0.5 - Typ. 0.03 13 7.5 0.9 4 4.5 49.5 12 6 195 126 50 Max. Units 50 80 1 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Co...