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SSM90T03GP

Silicon Standard

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

SSM90T03GP,S N-channel Enhancement-mode Power MOSFET Low gate-charge Simple drive requirement D Fast switching G Pb...


Silicon Standard

SSM90T03GP

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Description
SSM90T03GP,S N-channel Enhancement-mode Power MOSFET Low gate-charge Simple drive requirement D Fast switching G Pb-free, RoHS compliant. S DESCRIPTION BVDSS RDS(ON) ID The SSM90T03GS is in a TO-263 package, which is widely used for commercial and industrial surface mount applications. This device is suitable for low voltage applications such as DC/DC converters. The through-hole version, the SSM90T03GP in TO-220, is available for vertical-mounting, where a small footprint is required on the board, and/or an external heatsink is to be attached. GD S ABSOLUTE MAXIMUM RATINGS G D S 30V 4mΩ 75A TO-263 (S) TO-220 (P) Symbol VDS VGS ID @ Tc=25°C ID @ Tc=100°C IDM PD @ Tc=25°C EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS = 4.5V Continuous Drain Current, VGS = 4.5V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy3 Storage Temperature Range Operating Junction Temperature Range ...




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