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SSM7811GM

Silicon Standard

N-channel Enhancement-mode Power MOSFET

SSM7811GM N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID 25V 12mΩ 11.8A Pb-free; RoHS-com...


Silicon Standard

SSM7811GM

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Description
SSM7811GM N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID 25V 12mΩ 11.8A Pb-free; RoHS-compliant SO-8 D D D D SO-8 G S SS DESCRIPTION The SSM7811GM acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. The SSM7811GM is supplied in an RoHS-compliant SO-8 package, which is widely used for medium power commercial and industrial surface mount applications. ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-source voltage Gate-source voltage Continuous drain current, TC = 25°C Pulsed drain current1 TC = 70°C Total power dissipation, TC = 25°C Linear derating factor Storage temperature range Operating junction temperature range Value 25 ±12 11.8 9.4 30 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C THERMAL CHARACTERISTICS Symbol RΘJA Parameter Maximum thermal...




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