SSM7002DGU

SSM7002DGU Dual N-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY BVDSS R DS(ON) ID 50V 3Ω 250mA Pb-free; RoHS-compliant SOT-363 G1 S1 D2 SOT-363 D1 G2 S2 DESCRIPTION The SSM7002DG acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. The SSM7002DGU is supplied in a RoHS-compliant SOT-363 package, which is widely used where board space is critical and a small footprint is required. ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID ISD IDM PD TSTG TJ Parameter Drain-source voltage Gate-source voltage Continuous drain current 3, T A = 25°C Source-drain diode current Pulsed drain current 1,2 Total power dissipation 3, TA = 25°C TA = 75°C Storage temperature range Operating junction temperature range THERMAL CHARACTERISTICS Symbol RΘJA Parameter Maximum thermal resistance, junction-ambient3 Value 50 ± 20 250 115 1.0 200 120 -55 ...