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SSM6N17FU

Part Number	SSM6N17FU
Manufacturer	Toshiba Semiconductor
Description	N-Channel MOSFET
Published	Jan 27, 2007
Detailed Description	SSM6N17FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N17FU High Speed Switching Applications Analog...
Datasheet	SSM6N17FU PDF File

Overview

SSM6N17FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N17FU High Speed Switching Applications Analog Switch Applications • Suitable for high-density mounting due to compact package • High drain-source voltage • High speed switching Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS 50 V Gate-Source voltage VGSS ±7 V Drain current DC Pulse Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range ID 100 mA IDP 200 PD(Note 1) 200 mW Tch 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/...

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