SSM6N16FE

SSM6N16FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N16FE High Speed Switching Applications Analog Switching Applications  Suitable for high-density mounting due to compact package  Low on resistance: Ron = 3.0 Ω (max) (@VGS = 4 V) : Ron = 4.0 Ω (max) (@VGS = 2.5 V) : Ron = 15 Ω (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation (Ta = 25°C) (Note 1) Channel temperature Storage temperature range VDS VGSS ID IDP PD Tch Tstg 20 V ±10 V 100 mA 200 150 mW 150 °C -55 to 150 °C Note: Note 1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6) Unit: mm JEDEC JEITA TOSHIBA ― ― 2-2N1D Weight: 3.0 mg (typ.) 0.3 mm 0.45 mm Marking 6 5 4 Equivalent Circuit 6 5 4 DS...